Seminário con el prof. Dr. Fabrício Luiz Faita – 16 de octubre de 2015 – 10h15min
EL PROGRAMA DE POSGRADO EN FÍSICA invita a todos para lo seminario:
Fundamental concepts and study in bilayered HfAlO/HfAlOx structures with
enhanced resistive switching and multilevel behavior
Dr. Fabrício Luiz Faita – UFSC/FSC
Resumen:
Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. In this seminary, will be presented some fundamental concepts about Resistive Switching (RS) in transition metal oxides (TMOs) and an investigation of the RS phenomena in hafnium aluminum oxide HfAlO/HfAlOx bilayer thin films structures. The bilayer structures exhibit multilevel resistive switching and the switching ratio becomes more prominent with increasing the HfAlO layer thickness (switching ratio of ≈ 5×107). Finaly, this study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament.
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