THE PHYSICS GRADUATE PROGRAM invites everyone to the seminar:
Study of magnetic tunnel junctions with insulating barriers piezoelectric of AlN
Rafael Domingues Della Pace
UFSC/FSC
Abstract:
The 90s saw a huge breakthrough in relations between resistivity and magnetic fields. The ordinaries and anisotropic magnetoresistence, know for more the century, were also included new phenomena such as giant magnetoresistance, colossal, inversion of magnetization by injecting currents and polarized quantum tunneling dependent on spin. These new effects enabled a huge advance in understanding of the fundamentals in solid state and a number of new technologies already in use or under development. Magnetic tunnel junction (MTJ) were first preformed experimentally in the early 70 [1], but reproducible results were achieved only 20 years later. Then follows extensive research in the fields magnetic tunnel junction with insulating barrier amorphous AlOx, TiOx e SiO2, coming to a limit on the tunnel magnetoresistance (TMR) de 70%, room temperature and low fields, using electrodes CoFeSiB and amorphous barrier AlOx[2,3]. Butler and Mathon in 2001 [4,5] predicted, through calculation from first principles, a tunnel junction Fe/MgO/Fe with epitaxial growth of MgO barrier and with directed <001>, a TMR above 1000% could be reached. A few years later experimental groups [6,7,8] obtained results for a rate of TMR 180% and 220%. With the development in this area, which is now called spin electronics or spintronics simply, other interconnections between magnetic and electric properties were explored, among these have highlighted the ferroelectric and multiferroic materials. Emerging a new concept in tunnel junctions, where we as a barrier piezoelectric and/or ferroelectric materials, which leads to the tunnel junctions ferroelectric (FTJ) and tunnel junctions multiferróicas (MFTJ) [9]. Magnetic tunnel junctions with aluminum nitride barrier (AlN – highly textured), and electrodes of CoFeSiB were studied. Both AlN barrier as the electrodes were grown by magnetron sputtering.It is grown barrier in a reactive atmosphere with 20% of nitroĝeino (N2). Structural characterization were made using diffraction of x-ray (XRD) and transmission electron microscopy (TEM), they showed that even for very thin thicknesses of AlN, around 6 and 8 nm was possible to obtain textured films in the direction (002) and thereby obtain the effect of piezoelectricity. Through the electrical measurements it was possible to show that there is an electric polarization in the joints, where it measures the mechanical stresses were applied to the junction occurred a significant change in IxV curve. It also found one electrical hysteresis curves in IxV.
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Date: 4/November/2016 – (friday) – Place: Sala 212 – Auditório do Departamento de Física- Time: 10h15min
